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Part Number: AF70N03

 

 

 

 

Description: The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ...


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AF70N03 General Description


The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

AF70N03 Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (Note 1) TA=25ºC 60 A
TA=70ºC 43
IDM Pulsed Drain Current (Note 2) 195 A
IS Continuous Source Current (Diode Conduction) (Note 1) 53 A
PD Total Power Dissipation TA=25ºC 0.36 W
Linear Derating Factor
TJ Storage Temperature Range -55 to 150 ºC
TSTG Operating Junction Temperature Range -55 to 150 ºC

AF70N03 Features

-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product

AF70N03 Connection Diagram

AF70N03 Connection Diagram

AF70N03 datasheet

AF70N03
PDF/DataSheet Download

Find AF70N03 Suppliers

  • ·AF70N02
  • ANACHIP [Anachip Corp] 
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  • ANACHIP [Anachip Corp] 
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  • AF70N02D Datasheet Download
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  • ANACHIP [Anachip Corp] 
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  • ·AF70N03D
  • ANACHIP [Anachip Corp] 
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  • AF70N03D Datasheet Download
  • ·AF70N03DA
  • ANACHIP [Anachip Corp] 
  • N-Channel Enhancement Mode Power MOSFET 
  • 463894 KB
  • AF70N03DA Datasheet Download

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