AF70N03

Features:

-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product


Pinout




Specifications

Symbol	Parameter		Rating	Units
VDS	Drain-Source Voltage		30	V
VGS	Gate-Source Voltage		±20	V
ID	Continuous Drain Current (Note 1)	TA=25ºC	60	A
		TA=70ºC	43
IDM	Pulsed Drain Current (Note 2)		195	A
IS	Continuous Source Current (Diode Conduction) (Note 1)		53	A
PD	Total Power Dissipation	TA=25ºC	0.36	W
	Linear Derating Factor
TJ	Storage Temperature Range		-55 to 150	ºC
TSTG	Operating Junction Temperature Range		-55 to 150	ºC

Description

The AF70N03 advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.