Purchase AFM08P2-000, In-stock AFM08P2-000 From SeekIC.
MFG:AI D/C:0018
Part Number: AFM08P2-000
MFG: AI
D/C: 0018
Description: The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 mm and a tot...
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AFM08P2-000
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DataSheet
General Description
AFM08P2-000 General Description
The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 mm and a total gate periphery of 800 mm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.
AFM08P2-000 Maximum Ratings
| Characteristic |
Value |
| Drain to Source Voltage (VDS) |
6 V |
| Gate to Source Voltage (VGS) |
-4 V |
| Drain Current (IDS) |
IDSS |
| Gate Current (IGS) |
2 mA |
| Total Power Dissipation (PT) |
1.4W |
| Storage Temperature (TST) |
-65 to +150°C |
| Channel Temperature (TCH) |
175°C |
AFM08P2-000 Features
`24 dBm Output Power @ 18 GHz
`High Associated Gain, 8.5 dB @ 18 GHz
`High Power Added Efficiency, 20%
`Broadband Operation, DC40 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding
`High Associated Gain, 8.5 dB @ 18 GHz
`High Power Added Efficiency, 20%
`Broadband Operation, DC40 GHz
`0.25 mm Ti/Pd/Au Gates
`Passivated Surface
`Through-Substrate Via Hole Grounding
AFM08P2-000
PDF/DataSheet Download
- Datasheet: AFM08P2-000
- File Size: 19867 KB
- Manufacturer: ALPHA [Alpha Industries]
- Click here to Download
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