MOSFET Dual N-Channel
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 10 V |
| Gate-Source Breakdown Voltage : | 10.6 V | Continuous Drain Current : | 6.9 mA |
| Resistance Drain-Source RDS (on) : | 500 Ohms | Configuration : | Dual |
| Maximum Operating Temperature : | + 70 C | Mounting Style : | SMD/SMT |
| Package / Case : | SOIC-8 |