MOSFET Dual EPAD(R) N-Ch
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 10 V |
| Gate-Source Breakdown Voltage : | +/- 6.6 V | Continuous Drain Current : | 3 mA |
| Resistance Drain-Source RDS (on) : | 500 Ohms | Configuration : | Dual |
| Maximum Operating Temperature : | + 70 C | Mounting Style : | Through Hole |
| Package / Case : | PDIP-8 |