AM0608-070

The AM0608-070 is an internally-matched, common base silicon bipolar device optimized for pulsed applications in the 600-750 MHz frequency range.There are some features of AM0608-070 as follows.First is refractory/gold metallization.The second is internal input matching.Then is metal/ceramic hermetic package.The last one is POUT=70 W MIN, with 7.3 dB gain.

What comes next is about the absolute maximum ratings of AM0608-070 (Tcase=25).The PDISS (power dissipation) is 250 W (TC50).The IC (device current) is 6.5 A.The VCC (collector-supply voltage) is 55 V.The TJ (junction temperature (pulsed RF operation)) is 250.The TSTG (storage temperature) is from -65 to +200.Then is about the thermal data.The RTH (j-c) (junction-case thermal resistance) is 0.60 /W.

The following is about the electrical specifications of AM0608-070(Tcase=25).First is about the static specifications.The minimum BVCBO is 65 V at IC=10 mA, IE=0 mA.The minimum BVEBO is 3.5 V at IE=1 mA, IC=0 mA.The minimum BVCER is 65 V at IC=10 mA, RBE=10.The maximum ICES is 6.25 mA at VBE=0 V, VCE=50 V.The minimum hFE is 15 and the maximum is 120 at VCE=5 V, IC=500 mA.Then is about the dynamic specifications.The minimum POUT is 70 W, the minimum C is 35% and the minimum GP is 7.3 dB at f=600-750 MHz, PIN=13 W,VCC=50 V.