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AM0608-200

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC £ 75°C) 875 W IC Device Current* 16.0 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptio...

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SeekIC No. : 004280650 Detail

AM0608-200: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC £ 75°C) 875 W IC Device Current* 16.0 A VCC Collector-Supply Voltage* 55 V TJ Junction...

AM0608-200 Data Sheet

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Part Number:
AM0608-200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC £ 75°C) 875 W
IC Device Current* 16.0 A
VCC

Collector-Supply Voltage*

 

 55 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM0608-200 is an internally-matched, common base silicon bipolar device optimized pulsed application in the 600 - 750 MHz frequency range. Housed in the industry-standard AMPAC™ metal/ ceramic package, this device uses a refractory/ gold overlay die geometry for ruggedness and long-term reliability.


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