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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 167 W IC Device Current* 8 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM82731-05...

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AM82731-050: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 167 W IC Device Current* 8 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (P...

AM82731-050 Data Sheet

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Part Number:: AM82731-050
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC100°C) 23 W ...
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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 40 W ...

Product Details

Description

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (TC 50°C)	167	W
I_C	Device Current*	8	A
V_CC	Collector-Supply Voltage*	46	V
T_J	Junction Temperature (Pulsed RF Operation)	250	°C
T_STG	Storage Temperature	- 65 to +200	°C

Description

The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM82731-050 is supplied in the AMPAC^TM Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

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