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Part Number: AMS285-1.2/AMS385-1.2

 

 

 

 

Description: AMS285-1.2/AMS385-1.2 are 1.2V micro power reference diodes. Operating over a wide current range, these devices feature low dynamic impeda...


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AMS285-1.2/AMS385-1.2 General Description


AMS285-1.2/AMS385-1.2 are 1.2V micro power reference diodes. Operating over a wide current range, these devices feature low dynamic impedance, low temperature coefficient, low noise and good long term stability. Applications include battery powered systems, instrumentation, temperature measurement, current sources, converters, notebook/ personal computer, pagers. The AMS285-1.2/AMS385-1.2 are available in TO-92, SO-8 and SOT-89 packages.

AMS285-1.2/AMS385-1.2 datasheet

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AMS285-1.2/AMS385-1.2 Relative Products

  • AMS285-1.2

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    The AMS285-1.2/AMS385-1.2 are two-terminal micropower band-gap voltage reference diodes. They feature a very low dynamic impedance and good temperature coefficient, operating over a 10A to 20mA current range. On-chip trimming is used to provide tight voltage...

  • AMS285/AMS385

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    AMS285/AMS385 are micro power reference diodes adjustable from 1.24 to 5.3V. Operating over a wide current range, these devices feature low dynamic impedance, low temperature coefficient, low noise and good long term stability. Applications include battery p...

  • AMS285

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    The AMS285/AMS385 are three-terminal micropower band-gap voltage reference diodes. They feature a very low dynamic impedance and good temperature coefficient, operating from 1.24V to 5.3V and over a 10A to 20mA current range. On-chip trimming is used to prov...

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    AMS26 series are voltage detector ICs featuring a high accuracy detector threshold of +/-2.0% and ultra-low supply current. Internal circuit contains a precision voltage reference, a comparator, resistor network, and an output driver. The AMS26 has an NPN op...

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    AMS255 is a two-terminal 1.2V micro power band-gap voltage reference diode, that offer the advantage of space saving subminiature SOT-23 packaging. Thin film processing and laser trimming at wafer level, ensures high accuracy and low temperature coefficient.

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