AO3415

MOSFET P-CH -20V -4.0A SOT23

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SeekIC No. : 003430876 Detail

AO3415: MOSFET P-CH -20V -4.0A SOT23

floor Price/Ceiling Price

US $ .08~.29 / Piece | Get Latest Price
Part Number:
AO3415
Mfg:
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~250
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  • 500~1000
  • Unit Price
  • $.29
  • $.19
  • $.15
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  • $.11
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 17.2nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1450pF @ 10V
Power - Max: 1.4W Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 4A
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
Gate Charge (Qg) @ Vgs: 17.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1450pF @ 10V


Features:

VDS (V) = -20V
ID = -4 A
RDS(ON)< 43m (VGS = -4.5V)
RDS(ON) < 54m (VGS = -2.5V)
RDS(ON) < 73m (VGS = -1.8V)
ESD Rating: 3000V HBM DS(ON)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current A TA=25°C ID -4.0 A
TA=70°C -3.5
Pulsed Drain Current B IDM -30
Power Dissipation A TA=25°C PD 1.4 W
TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C





Description

The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3415 is Pb-free (meets ROHS & Sony 259 specifications). AO3415L is a Green Product ordering option. AO3415 and AO3415L are electrically identical.




Parameters:

Technical/Catalog InformationAO3415
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs43 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 1450pF @ 10V
Power - Max1.4W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17.2nC @ 4.5V
Package / CaseSOT-23-3, TO-236-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO3415
AO3415
785 1010 2 ND
78510102ND
785-1010-2



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