AO4402

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 20A
Power - Max: 3.1W
Gate Charge (Qg) @ Vgs: 43nC @ 10V
Supplier Device Package: 8-SOIC
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 4630pF @ 10V
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 4.5V


Features:

V_DS (V) = 30V
I_D = 12A
R_DS(ON) < 14m (V_GS = 10V)
R_DS(ON) < 16m (V_GS = 4.5V)
R_DS(ON) < 22m (V_GS = 2.5V)




Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current A	TA=25°C	ID	12	A
	TA=70°C		10
Pulsed Drain Current B		IDM	80
Power Dissipation	TA=25°C	PD	3	W
	TA=70°C		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO4402 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features of the AO4433 are:(1)RDS(ON) < 14 m (VGS = 10 V);(2)RDS(ON) < 16 m (VGS = 4.5 V);(3)ID = 12 A;(4)VDS (V) = 30 V.

The absolute maximum ratings of the AO4402 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current TA=25°C: 12 A;(4)Continuous Drain Current TA=70°C: 10 A;(5)Pulsed Drain Current: 80 A;(6)Power Dissipation TA=25°C: 3.0 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4402 can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 1 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 0.6 to 1.2 V;(5)On state drain current: 60 A;(6)Forward Transconductance: 25 to 50 S;(7)Diode Forward Voltage: 0.8 to 1.0 V;(8)Maximum Body-Diode Continuous Current: 4.5 A. If you want to know more information such as the electrical characteristics about the AO4402, please download the datasheet in www.seekic.com or www.chinaicmart.com.