MFG:AO Package Cooled:SOP-8 D/C:09+
MFG: AO
Package Cooled: SOP-8
D/C: 09+
Description: The AO4404 uses advanced trench technology toprovide excellent RDS(ON), low gate charge andoperation...
| Paramete | Symbol | Maximum | Units | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current A | TA=25°C | ID | 8.5 | A |
| TA=70°C | 7.1 | |||
| Pulsed Drain Current B | IDM | 60 | ||
| Power Dissipation | TA=25°C | PD | 3 | W |
| TA=70°C | 2.1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C | |
AO4404
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The AO4403 is designed as one kind of P-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. The source leads are separat...
The AO4402 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. The source leads are separat...
The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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The AO3702/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AO3702 and AO3702L are electric...
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