AO4403

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 6.1A
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 46 mOhm @ 6.1A, 10V
Gate Charge (Qg) @ Vgs: 11.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1128pF @ 15V


Features:

V_DS (V) = -30V
I_D = -6.1 A
R_DS(ON) < 46m (V_GS = -10V)
R_DS(ON) < 61m (V_GS = -4.5V)
R_DS(ON) < 117m (V_GS = -2.5V)




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current A	TA=25°C	ID	-6.1	A
	TA=70°C		-5.1
Pulsed Drain Current B		IDM	-60
Power Dissipation A	TA=25°C	PD	3	W
	TA=70°C		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO4403 is designed as one kind of P-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features of the AO4433 are:(1)RDS(ON) < 46 m (VGS = -10 V);(2)RDS(ON) < 61 m (VGS = -4.5 V);(3)ID = -6.1 A;(4)VDS (V) = -30 V.

The absolute maximum ratings of the AO4403 can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 12 V;(3)Continuous Drain Current TA=25°C: -6.1 A;(4)Continuous Drain Current TA=70°C: -5.1 A;(5)Pulsed Drain Current: -60 A;(6)Power Dissipation TA=25°C: 3.0 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4403 can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -1 uA;(3)Gate-Body leakage current: +/- 100 nA;(4)Gate Threshold Voltage: -0.7 to -1.3 V;(5)On state drain current: 40 A;(6)Forward Transconductance: 7 tp 11 S;(7)Diode Forward Voltage: -0.75 to -1.0 V;(8)Maximum Body-Diode Continuous Current: -4.2 A. If you want to know more information such as the electrical characteristics about the AO4403, please download the datasheet in www.seekic.com or www.chinaicmart.com.

The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.




Parameters:

Technical/Catalog Information	AO4403
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.1A
Rds On (Max) @ Id, Vgs	46 mOhm @ 6.1A, 10V
Input Capacitance (Ciss) @ Vds	1128pF @ 15V
Power - Max	3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	11.3nC @ 4.5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO4403 AO4403 785 1019 6 ND 78510196ND 785-1019-6