AO4405

Features: VDS (V) = -30VID = -6.0ARDS(ON) < 50m (VGS = -10V)RDS(ON) < 85m (VGS = -4.5V)PinoutSpecifications Paramete Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current A TA=25°C ID -6.0 A TA=70°C -5.1 Pulsed ...

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AO4405 Picture
SeekIC No. : 004285766 Detail

AO4405: Features: VDS (V) = -30VID = -6.0ARDS(ON) < 50m (VGS = -10V)RDS(ON) < 85m (VGS = -4.5V)PinoutSpecifications Paramete Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source ...

floor Price/Ceiling Price

Part Number:
AO4405
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

VDS (V) = -30V
ID = -6.0A
RDS(ON) < 50m (VGS = -10V)
RDS(ON) < 85m (VGS = -4.5V)





Pinout

  Connection Diagram




Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID -6.0 A
TA=70°C -5.1
Pulsed Drain Current B IDM -30
Power Dissipation A TA=25°C PD 3 W
TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO4405 is designed as one kind of P-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 50 m (VGS = -10 V);(2)RDS(ON) < 85 m (VGS = -4.5 V);(3)ID = -6.0 A (VGS = -10 V);(4)VDS (V) = -30 V.

The absolute maximum ratings of the AO4405 can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: -6.0 A;(4)Continuous Drain Current TA=70°C: -5.1 A;(5)Pulsed Drain Current: -30 A;(6)Power Dissipation TA=25°C: 3.0 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -1 uA;(3)Gate-Body leakage current: +/- 100 nA;(4)Gate Threshold Voltage: -1.0 to -3.0 V;(5)On state drain current: -30 A;(6)Forward Transconductance: 9.5 S;(7)Diode Forward Voltage: -0.78 to -1.0 V;(8)Maximum Body-Diode Continuous Current: -4.2 A. If you want to know more information such as the electrical characteristics about the AO4405, please download the datasheet in www.seekic.com or www.chinaicmart.com.



The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package.

The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package.




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