AO4406

MOSFET N-CH 30V 11.5A 8-SOIC

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SeekIC No. : 003430234 Detail

AO4406: MOSFET N-CH 30V 11.5A 8-SOIC

floor Price/Ceiling Price

Part Number:
AO4406
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2300pF @ 15V
Power - Max: 3W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Current - Continuous Drain (Id) @ 25° C: 11.5A
Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 12A, 10V


Features:

VDS (V) = 30V
ID = 11.5A
RDS(ON) < 14m (VGS = 10V)
RDS(ON) < 16.5m (VGS = 4.5V)
RDS(ON) < 26m (VGS = 2.5V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID 11.5 A
TA=70°C 9.6
Pulsed Drain Current B IDM 80
Avalanche Current B,E IAV 25 A
Repetitive Avalanche Energy B,E L=0.1mH EAV 78 mJ
Power Dissipation TA=25°C PD 3 W
TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C





Description

The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.




Parameters:

Technical/Catalog InformationAO4406
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs14 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 15V
Power - Max3W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs24nC @ 4.5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO4406
AO4406
785 1021 6 ND
78510216ND
785-1021-6



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