AO4409

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 15A
Supplier Device Package: 8-SOIC
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 6400pF @ 15V


Features:

V_DS (V) = -30V
I_D = -15 A
Max R_DS(ON) < 7.5m (V_GS = -10V)
Max R_DS(ON) < 12m (V_GS = -4.5V)




Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current A	TA=25°C	ID	-15	A
	TA=70°C		-12.8
Pulsed Drain Current B		IDM	-80
Power Dissipation A	TA=25°C	PD	3	W
	TA=70°C		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a loadwitch or in PWM applications.




Parameters:

Technical/Catalog Information	AO4409
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	6400pF @ 15V
Power - Max	3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO4409 AO4409 785 1023 6 ND 78510236ND 785-1023-6