Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 8A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 3.1W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) @ Vgs: 16nC @ 10V
Supplier Device Package: 8-SOIC
Input Capacitance (Ciss) @ Vds: 760pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V
Features: ·VDS (V) = -30V
·ID = -8 A (VGS = -10V)
·RDS(ON) < 32mΩ (VGS = -10V)
·RDS(ON) < 55mΩ (VGS = -4.5V)Pinout
Specifications
|
Parameter |
Symbol |
Maximum |
Units |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
-30
±20 |
V
V |
Continuous Drain
Current A |
TA=25°C
TA=70°C |
ID |
-8
-6.6 |
A |
| Pulsed Drain CurrentB |
IDM |
-40 |
Power Dissipation A
|
TA=25°C
TA=70°C |
PD
|
3
2.1 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
°C |
DescriptionThe AO4411 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 32 m (VGS = -10 V);(2)RDS(ON) < 55 m (VGS = 4.5 V);(3)ID = -8.0 A (VGS = 10 V);(4)VDS (V) = -30 V.
The absolute maximum ratings of the AO4411 can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: -8.0 A;(4)Continuous Drain Current TA=70°C: -6.6 A;(5)Pulsed Drain Current: -40 A;(6)Power Dissipation TA=25°C: 3.0 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .
The electrical characteristics of AO4411 can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -1 uA;(3)Gate-Body leakage current: +/- 100 nA;(4)Gate Threshold Voltage: -1.2 to -2.4 V;(5)On state drain current: -40 A;(6)Forward Transconductance: 14.5 S;(7)Diode Forward Voltage: -0.76 to -1 V;(8)Maximum Body-Diode Continuous Current: -4.2 A. If you want to know more information such as the electrical characteristics about the AO4411, please download the datasheet in www.seekic.com or www.chinaicmart.com.
AO4411 Data Sheet
