MFG:AO Package Cooled:SOP-8 D/C:09+
MFG: AO
Package Cooled: SOP-8
D/C: 09+
Description: The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characte...
| Paramete | Symbol | Maximum | Units | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current A | TA=25°C | ID | 13.7 | A |
| TA=70°C | 9.7 | |||
| Pulsed Drain Current B | IDM | 60 | ||
| Power Dissipation | TA=25°C | PD | 3.1 | W |
| TA=70°C | 2 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C | |
AO4420
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The AO4419 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4419 is Pb-free (meets ROHS & Sony 259 specifications). AO4419L is a...
The AO4415 uses advanced trench technology to rovide excellent RDS(ON), and ultra-low low gate harge. This device is suitable for use as a load witch or in PWM applications.
The AO4414 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(...
The AO4413 uses advanced trench technology to rovide excellent RDS(ON), and ultra-low low gate harge with a 25V gate rating. This device is suitable or use as a load switch or in PWM applications.
The AO4411 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(...
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