AON7403

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) @ Vds: 1400pF @ 15V
Power - Max: 3.1W
Current - Continuous Drain (Id) @ 25° C: 29A
Package / Case: 8-VDFN Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (3x3)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
Gate Charge (Qg) @ Vgs: 24nC @ 15V


Features:

V_DS (V) = -30V
I_D = -8A (V_GS = -10V)
R_DS(ON) < 18mΩ (V_GS = -10V)
R_DS(ON) < 36mΩ (V_GS = -4.5V)




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±25	V
Continuous Drain Current B,G	TC=25	ID	-20	A
	TC=100		-20
Pulsed Drain Current C		IDM	-80
Continuous Drain Current	TA=25	IDSM	-8
	TA=70		-6
Power Dissipation B	TC=25	PD	27	W
	TC=100		11
Power Dissipation A	TA=25	PDSM	1.6
	TA=70		1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AON7403/L uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free