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AP72T02GJ

Specifications Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID @TC = 25°C Continuous Collector Current,VGS @ 10V 62 A ID @TC = 100°C Continuous Collector Current,VGS @ 10V 44 A IDM Pulsed Collector Cur...

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AP72T02GJ: Specifications Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID @TC = 25°C Continuous Collector Current,VGS @ 10V 62 ...

AP72T02GJ Data Sheet

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Part Number:
AP72T02GJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Specifications

 
Parameter
Rating
Units
VDS Drain-Source Voltage
25
V
VGS Gate-Source Voltage
±20
V
ID @TC = 25°C Continuous Collector Current,VGS @ 10V
62
A
ID @TC = 100°C Continuous Collector Current,VGS @ 10V
44
A
IDM Pulsed Collector Current
190
A
PD @TC = 25°C Total Power Dissipation
60
W
  Linear Derating Factor
0.4
W/
EAS Single Pulse Avalanche Energy
29
mJ
IAR Avalanche Current
24
A
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C



Description

The Advanced Power MOSFETs AP72T02GJ from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.




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