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MFG:Microsemi-PPG  Category:Discrete Semiconductor Products  

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Part Number: APT1001R6SFLLG

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

 

 

Descriptions: FREDFET N-CH 8A 1000V D3PAK

Price Break

30

Unit Price

12.31200

Extended Price

369.36

(All prices are in USD) Prices for reference only
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APT1001R6SFLLG General Description

FREDFET N-CH 8A 1000V D3PAK

APT1001R6SFLLG Parameters

Technical/Catalog InformationAPT1001R6SFLLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 25V
Power - Max266W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseD³Pak (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT1001R6SFLLG
APT1001R6SFLLG

APT1001R6SFLLG datasheet

APT1001
PDF/DataSheet Download

Find APT1001R6SFLLG Suppliers

  • ·APT1001R1AN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3  
  • 214276 KB
  • APT1001R1AN Datasheet Download
  • ·APT1001R1AVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 
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  • ·APT1001R1BN
  • ADPOW [Advanced Power Technology] 
  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 
  • 53353 KB
  • APT1001R1BN Datasheet Download
  • ·APT1001R1BVFR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 72323 KB
  • APT1001R1BVFR Datasheet Download
  • ·APT1001R1DN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP  
  • 395046 KB
  • APT1001R1DN Datasheet Download
  • ·APT1001R1HN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO  
  • 227320 KB
  • APT1001R1HN Datasheet Download
  • ·APT1001R1HVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 68546 KB
  • APT1001R1HVR Datasheet Download
  • ·APT1001R1SN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB  
  • 247344 KB
  • APT1001R1SN Datasheet Download

Related Part Number

APT1001R6SFLLG Relative Products

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    APT1001R1SN is a kind of N-channel enhancement mode high voltage power MOSFET. What comes next is about the maximum ratings APT1001R1SN at TC=25.The VDSS (drain-source voltage) is 1000 V.The ID (continuous drain current @ TC=25) is 10.5 A.The IDM (pulsed dr...

  • APT1001R1HVR

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  • APT1001R1HN

    APT1001R1HN

    APT1001R1HN is a kind of N-channel enhancement mode high voltage power MOSFET. What comes next is about the maximum ratings APT1001R1HN at TC=25.The VDSS (drain-source voltage) is 1000 V.The ID (continuous drain current @ TC=25) is 9.5 A.The IDM (pulsed dra...

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