APT4F120K

MOSFET N-CH 1200V 4A TO-220

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SeekIC No. : 003431393 Detail

APT4F120K: MOSFET N-CH 1200V 4A TO-220

floor Price/Ceiling Price

US $ 1.35~2.96 / Piece | Get Latest Price
Part Number:
APT4F120K
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • Unit Price
  • $2.96
  • $2.64
  • $2.38
  • $2.17
  • $1.96
  • $1.75
  • $1.48
  • $1.41
  • $1.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/3/28

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) @ Vgs: 43nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1385pF @ 25V
Power - Max: 225W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 43nC @ 10V
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: TO-220
Manufacturer: Microsemi Power Products Group
Power - Max: 225W
Input Capacitance (Ciss) @ Vds: 1385pF @ 25V
Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA


Parameters:

Technical/Catalog InformationAPT4F120K
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs4.6 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 1385pF @ 25V
Power - Max225W
PackagingTube
Gate Charge (Qg) @ Vgs43nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT4F120K
APT4F120K
APT4F120KMI ND
APT4F120KMIND
APT4F120KMI



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