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Description: The AS5LC512K8 is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, wit...


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AS5LC512K8 General Description


The AS5LC512K8 is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW.

As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +3.3V power supply and all inputs and outputs are fully TTL-compatible.

The AS5LC512K8DJ offers the convenience and reliability of the AS5LC512K8 SRAM and has the cost advantage of a plastic encapsulation.

AS5LC512K8 Maximum Ratings

Voltage on Vcc Supply Relative to Vss
Vcc ................................................................. ..-.5V to 4.6V
Storage Temperature ............................ .-65°C to +150°C
Short Circuit Output Current (per I/O).........................20mA
Voltage on any Pin Relative to Vss.......................-.5V to 4.6V
Maximum Junction Temperature**...........................+150°C
Power Dissipation .............................................................1W

AS5LC512K8 Features

• Ultra High Speed Asynchronous Operation
• Fully Static, No Clocks
• Multiple center power and ground pins for improved noise immunity
• Easy memory expansion with CE\ and OE\ options
• All inputs and outputs are TTL-compatible
• Single +3.3V Power Supply +/- 0.3%
• Data Retention Functionality Testing
• Cost Efficient Plastic Packaging
• Extended Testing Over -55ºC to +125ºC for plastics

AS5LC512K8 Connection Diagram

AS5LC512K8  Connection Diagram

AS5LC512K8 datasheet

AS5LC512K8DJ-12L/883C
PDF/DataSheet Download

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