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Part Number: AT006N3-93

 

 

 

 

Description: The AT006N3-93GHz GaAs FET IC non-reflective bridged "T"attenuator provides up to 30dB of "nonreflective" attenuation. ...


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AT006N3-93 General Description


    The AT006N3-93GHz GaAs FET IC non-reflective bridged "T"attenuator provides up to 30dB of "nonreflective" attenuation. The control voltage requirements are 0 to -5 V.

    This attenuator has two independent voltage controls, which must be adjusted in a prescribed manner to obtain the desired attenuation under non-reflective conditions. Refer to the Application Notes section, "Dual Voltage Con-trolled VVA."

     Applications for these fast attenuators are AGC circuitsand variable level control in various military and telecom-munications systems.

AT006N3-93 Maximum Ratings

Characteristic
Value
RF Input Power (RF In)
10 mW > 500 MHz
4 mW @ 50 MHz
Control Voltage (VC)
+0.2 V, -10 V
Operating Temperature (TOP)
-40°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Thermal Resistance (JC)
25°C/W

AT006N3-93 Features

 Dual Control Voltages
 Low Insertion Loss
Broadband DC8 GHz
Small Low Cost "Chip on Board" Package

AT006N3-93 Connection Diagram

AT006N3-93  Connection Diagram

AT006N3-93 datasheet

AT006N3-93
PDF/DataSheet Download

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