AT49BV160CT

Features: • Single Voltage Read/Write Operation: 2.65V to 3.6V• Access Time 70 ns• Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout• Fast Word Program Time 12 s...

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AT49BV160CT Picture
SeekIC No. : 004290232 Detail

AT49BV160CT: Features: • Single Voltage Read/Write Operation: 2.65V to 3.6V• Access Time 70 ns• Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout...

floor Price/Ceiling Price

Part Number:
AT49BV160CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Access Time 70 ns
• Sector Erase Architecture
   Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
   Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time 12 s
• Fast Sector Erase Time 300 ms
• Suspend/Resume Feature for Erase and Program
   Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
  Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
   12 mA Active
   13 A Standby
• VPP Pin for Write Protection
• WP Pin for Sector Protection
• RESET Input for Device Initialization
• Flexible Sector Protection
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)



Pinout

  Connection Diagram


Specifications

Temperature under Bias ............................... -55°C to +125°C
Storage Temperature ................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability




Description

The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. AT49BV160CT is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.




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