AT49LV002N General Description
AT49LV002N Maximum Ratings
AT49LV002N Features
• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 ms/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
25 mA Active Current
50 mA CMOS Standby Current
• Typical 10,000 Write Cycles
AT49LV002N Connection Diagram
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