ATF-35076

The ATF-35076 is a kind of Pseudomorphic High Electron Mobility Transistor (PHMET). It is available in the Style 76 cost effective, ceramic microchip package. The device offers premium noise figure and is ideal for use in the first stage of extremely low noise cascades. The GaAs PHEMT device has a nominal 0.25 micro gate length with a total gate periphery of 200 microns. Proven gold base metallization systems and nitride passivation assure rugged, reliable device.

There are some ATF-35076 features as follows: (1)PHEMT technology; (2)low noise figure: 0.75 typical at 12 GHz; (3)high associated gain: 11 dB typical at 12 GHz; (4)cost effective ceramic microchip package; (5)tape-and-reel packaging option available.

What comes next is about the ATF-35076 absolute maximum ratings: (1)drain-source voltage, VDS: +4 V; (2)gate-source voltage, VGS: -3 V ; (3)drain current, ID: Idss; (4)total power dissipation, PT: 225 mW; (5)RF input power, PINmax: +10 dBm; (6)channel temperature, TCH: 150; (7)storage temperature, TSTG: -65 to 150.

The last one is about the ATF-35076 electrical specifications (Ta=25): (1)NFO, optimum noise figure: 0.25 dB typ at VDS=1.5 V, IDS=10 mA, f=4.0 GHz; 0.75 dB typ and 0.80 dB max at VDS=1.5 V, IDS=10 mA, f=12 GHz; (2)GA, gain @ NFO: 16.0 dB typ at VDS=1.5 V, IDS=10 mA, f=4.0 GHz; 10.0 dB min and 11.0 dB typ at VDS=1.5 V, IDS=10 mA, f=12 GHz; (3)gm, transconductance: 40 mS min and 65 mS typ at VDS=1.5 V, VGS=0 V; (4)Idss, saturated drain current: 20 mA min, 50 mA typ and 70 mA max at VDS=1.5 V, VGS=0 V; (5)VP, pinchoff voltage: -2.0 V min and -0.4 V typ at VDS=1.5 V, IDS=1 mA.