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MFG:PHI Package Cooled:SOT-343
Part Number: BFG10W
MFG: PHI
Package Cooled: SOT-343
Description: NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.<...
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BFG10W
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DataSheet
General Description
BFG10W General Description
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
BFG10W Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
250 |
mA | |
| IC(AV) | average collector current |
- |
250 |
mA | |
| Ptot | total power dissipation |
up to Ts = 102 °C; note 1 |
- |
400 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFG10W Features
· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
BFG10W Typical Application
· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
BFG10W Connection Diagram
BFG10W
PDF/DataSheet Download
- Datasheet: BFG10W
- File Size: 59808 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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