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MFG:PHILIPS  Package Cooled:06+  D/C:-  

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Part Number: BFG10X

 

MFG: PHILIPS

Package Cooled: 06+

D/C: -

Description: NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.<...


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BFG10X General Description


NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

BFG10X Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
250
mA
IC(AV) average collector current  
-
250
mA
Ptot total power dissipation
up to Ts = 102 °C; note 1
-
400
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C

BFG10X Features

· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.

BFG10X Typical Application

· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.

BFG10X Connection Diagram

BFG10X Connection Diagram

BFG10X datasheet

BFG10X
PDF/DataSheet Download

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