BFG11

The BFG11 is designed as NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. Its typical applications is common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

It has five features. The first one is it would have high power gain. The second one is it would have high efficiency. The third one is it would have small size discrete power amplifier. The fourth one is it would hav 1.9 GHz operating area. The fifth one is gold metallization ensures excellent reliability. That are all the main features.

Some limiting values have been concluded into several points as follow. The first one is about its collector-base voltage open emitter which would be max 20V. The second one is about its collector-emitter voltage open base which would be max 8V. The third one is about its emitter-base voltage open collector which would be 2.5V. The fourth one is about its collector current (DC) which would be max 500mA. The fifth one is about its average collector current which would be max 500mA. The sixth one is about its total power dissipation which would be max 400mW. The seventh one is about its storage temperature which would be from -65 to +150°C. The eighth one is about its junction temperature which would be max 175°C. The ninth one is about its thermal resistance from junction to soldering point which would be 290K/W.

Also some characteristics about it. The first one is about its collector-base breakdown voltage which would be min 20V. The second one is about its collector-emitter breakdown voltage which would be min 8V. The third one is about its emitter-base breakdown voltage which would be min 2.5V. The fourth one is about its collector cut-off current which would be max 100mA. The fifth one is about its DC current gain which would be min 25. The sixth one is about its collector capacitance which would be max 4pF. The seventh one is about its feedback capacitance which would be max 3pF. And so on. For more information please contact us.