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MFG:PHILIPS  Package Cooled:06+  D/C:SOT343  

BFG25AW/X Product Image

BFG Series Datasheet download

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Part Number: BFG25AW/X

 

MFG: PHILIPS

Package Cooled: 06+

D/C: SOT343

Description: NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.


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BFG25AW/X General Description


NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

BFG25AW/X Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
8
V
VCEO collector-emitter voltage
open base
-
5
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
6.5
mA
Ptot total power dissipation
Ts 85 °C; see Fig.2; note 1
-
500
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.

BFG25AW/X Features

· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.

BFG25AW/X Typical Application

Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.

BFG25AW/X Connection Diagram

BFG25AW/X Connection Diagram

BFG25AW/X datasheet

BFG25AW/X
PDF/DataSheet Download

  • Datasheet: BFG25AW/X
  • File Size: 146515 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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Related Part Number

BFG25AW/X Relative Products

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    NPN silicon planar epitaxial transistorBFG25AWin a 4-pin dual-emitter SOT343N plastic package.

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    NPN silicon wideband transistor BFG25A/Xin a four-lead dual emitter SOT143B plastic package (cross emitter).

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