BFG25AW/X Selling Leads, Price trend, BFG25AW/X DataSheet download, circuit diagram from SeekIC.com

Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.ApplicationWideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. M...

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SeekIC No. : 004299650 Detail

BFG25AW/X: Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.ApplicationWideband applications in UHF low power amplifiers, such as pocket ...

BFG25AW/X Data Sheet

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Part Number:: BFG25AW/X
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Product Details

Description

Features:

· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.

Application

Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	8	V
V_CEO	collector-emitter voltage	open base	-	5	V
V_EBO	emitter-base voltage	open collector	-	2	V
I_C	collector current (DC)		-	6.5	mA
P_tot	total power dissipation	T_s 85 °C; see Fig.2; note 1	-	500	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector pin.

Description

NPN silicon planar epitaxial transistor BFG25AW/X in a 4-pin dual-emitter SOT343N plastic package.

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BFG25AW/X

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