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Part Number: BFQ17

 

 

 

 

Description: NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. T...


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BFQ17 General Description


NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain.

BFQ17 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
40
V
VCER collector-emitter voltage
RBE 50
- 40 V
VCEO collector-emitter voltage
open base
-
25
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current
-
150
mA
ICM peak collector current
f > 1 MHz
- 300 mA
Ptot total power dissipation
up to Ts = 145 °C note 1
-
1
W
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C

Note
1. Ts is the temperature at the soldering point of the collector tab.

BFQ17 Connection Diagram

BFQ17  Connection Diagram

BFQ17 datasheet

BFQ17
PDF/DataSheet Download

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