Features: • For high gain low noise amplifiers• Ideal for wideband applications, cellular telephones,cordless telephones, SAT-TV and high frequency oscillators•Gma=17.5dB at 1.8GHz• Small SOT343 package• Current easy adjustable by an external resistor• Open coll...
BGB420: Features: • For high gain low noise amplifiers• Ideal for wideband applications, cellular telephones,cordless telephones, SAT-TV and high frequency oscillators•Gma=17.5dB at 1.8GHz...
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| Parameter | Symbol | Value | Unit |
| Maximum collector-emitter voltage | VCE | 3.5 | V |
| Maximum collector current | IC | 30 | mA |
| Maximum bias current | IBias | 3 | mA |
| Maximum emitter-base voltage | VEB | 1.5 | V |
| Maximum base current | IB | 0.7 | mA |
| Total power dissipation, TS < 107°C 1) | Ptot | 120 | mW |
| Junction temperature | Tj | 150 | |
| Operating temperature range | TA | -40 ..+85 | |
| Storage temperature range | TSTG | -65 ... +150 | |
| Thermal resistance: junction-soldering point | RthJS | <270 | K/W |
Notes:
For detailed symbol description refer to figure 1.
1) TS is measured on the emitter lead at the soldering point to the PCB
SIEGET®-25 NPN Transistor BGB420 with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias .