BLF175

Features:

* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			110	V
VGS	gate-source voltage			20	V
ID	DC drain current			4	A
Ptot	total power dissipation	up to Tmb = 25 °C		68	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF175 designed for large signal amplifier applications in the HF/VHF frequency range.

The transistor BLF175 has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

The BLF175 is a marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer
to the 'General' section for further information.