BLF378

Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Packaging : Tray
Drain-Source Breakdown Voltage : 125 V
Continuous Drain Current : 18 A
Maximum Operating Temperature : + 200 C
Frequency : 225 MHz
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOT-262A


Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.


Application

* Broadcast transmitter applications in the VHF frequency range.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			18	A
Ptot	total power dissipation	up to Tmb = 25  C; total device;both sections equally loaded		500	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF378 encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.