BLF543

Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			2	A
Ptot	total power dissipation	up to Tmb =25 °C		25	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF543 designed for communications transmitter applications in the UHF frequency range.

The transistor BLF543 is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.

The BLF543 are marked with a VGS indication intended for matched pair applications.