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BLS6G3135-20,112

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220271 Detail

BLS6G3135-20,112: Transistors RF MOSFET Power LDMOS TNS

BLS6G3135-20,112 Data Sheet

floor Price/Ceiling Price

US $ 149.02~154.16 / Piece | Get Latest Price
Part Number:
BLS6G3135-20,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~15
  • 15~25
  • Unit Price
  • $154.16
  • $149.02
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 3.1 GHz to 3.5 GHz Gain : 15.5 dB
Output Power : 20 W Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 2.1 A Gate-Source Breakdown Voltage : 13 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-608A
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Output Power : 20 W
Gain : 15.5 dB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 2.1 A
Package / Case : SOT-608A
Frequency : 3.1 GHz to 3.5 GHz


Parameters:

Technical/Catalog InformationBLS6G3135-20,112
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeLDMOS
Voltage - Rated 60V
Current Rating2.1A
Package / Case*
PackagingTray
Drawing Number568; SOT608; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BLS6G3135 20,112
BLS6G313520,112



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