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Part Number: BLV10

 

MFG: PHL

 

 

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. t...


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BLV10 General Description


N-P-N silicon planar epitaxial  transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

BLV10 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 18v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC(AV)  max. 1.5 A
(peak value); f > 1 MHz   ICM  max. 4.0 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 20 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV10 Connection Diagram

BLV10 Connection Diagram

BLV10 datasheet

BLV10
PDF/DataSheet Download

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