BLV10

Transistors RF Bipolar Power RF Transistor

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BLV10 Picture
SeekIC No. : 00218267 Detail

BLV10: Transistors RF Bipolar Power RF Transistor

floor Price/Ceiling Price

US $ 25.2~37.8 / Piece | Get Latest Price
Part Number:
BLV10
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $37.8
  • $31.5
  • $28.35
  • $25.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Packaging : Tray    

Description

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging : Tray


Pinout

  Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 18v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC(AV)  max. 1.5 A
(peak value); f > 1 MHz   ICM  max. 4.0 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 20 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



Description

N-P-N silicon planar epitaxial  transistor BLV10 intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

BLV10 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.


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