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Part Number: BLV103

 

MFG: PHL

 

 

Description: NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is inten...


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BLV103 General Description


NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter,class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base.

BLV103 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 550 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 4 V
IC peak collector current DC or average value 1.25 A
Ptot total power dissipation Tmb =25  17 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV103 Features

* Internal matching for an optimum wideband capability and high gain
* Emitter-ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability.

BLV103 Connection Diagram

BLV103 Connection Diagram

BLV103 datasheet

BLV103
PDF/DataSheet Download

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