BLV103 Selling Leads, Price trend, BLV103 DataSheet download, circuit diagram from SeekIC.com

Features: * Internal matching for an optimum wideband capability and high gain* Emitter-ballasting resistors for optimum temperature profile* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage ...

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BLV103: Features: * Internal matching for an optimum wideband capability and high gain* Emitter-ballasting resistors for optimum temperature profile* Gold metallization ensures excellent reliability.PinoutS...

BLV103 Data Sheet

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Part Number:: BLV103
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/25

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Recent History
What is this?

BLV10 evaluate
US $25.2 - 37.8 / Piece

Transistors RF Bipolar Power RF Transistor
BLV100 evaluate
Features: * Internal input matching to achieve high power gain * Ballasting resistors for an optim...
BLV11 evaluate
US $26.4 - 39.6 / Piece

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Product Details

Description

Features:

* Internal matching for an optimum wideband capability and high gain
* Emitter-ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter		550	V
VCES	collector-emitter voltage	open base		30	V
VEBO	emitter-base voltage	open collector		4	V
IC	peak collector current	DC or average value		1.25	A
Ptot	total power dissipation	Tmb =25		17	W
Tstg	storage temperature		-65	+150
Tj	operating junction temperature			200

Description

NPN silicon planar epitaxial transistor BLV103 encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. BLV103 is intended for common emitter,class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base.

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BLV103

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