BLV11

Configuration :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 18 V
Continuous Collector Current : 3 A
Package / Case : SOT-123
Power Dissipation : 36 W
Maximum Operating Frequency : 250 MHz
Maximum DC Collector Current : 8 A


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	18v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	3 A
(peak value); f > 1 MHz	ICM	max.	8 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C	Ptot (r.f.)	max.	36 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial  transistor BLV11 intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The BLV11 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

BLV11 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.