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Part Number: BLV12

 

 

Package Cooled: 500

 

Description: NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is desig...


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BLV12 General Description


NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for common emitter,class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange.

BLV12 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 36 V
VCES collector-emitter voltage open base  16 V
VEBO emitter-base voltage open collector 3 V
IC,IC(AV) collector current DC or average value 6 A
ICM collector current peak value f > 1 MHz 18 A
Ptot total power dissipation RF operation;f > 1 MHz;
Tmb =25 °C		 100 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV12 Features

* Emitter-ballasting resistors for an optimum temperature profile
* Excellent reliability
* Withstands full load mismatch.

BLV12 Connection Diagram

BLV12 Connection Diagram

BLV12 datasheet

BLV12
PDF/DataSheet Download

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