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BLV193

Features: * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 36 V VCES collector-emitter voltage open ...

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SeekIC No. : 004300678 Detail

BLV193: Features: * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UN...

BLV193 Data Sheet

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Part Number:
BLV193
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 36 V
VCES collector-emitter voltage open base  16 V
VEBO emitter-base voltage open collector 3 V
IC peak collector current DC or average value 3.5 A
Ptot total power dissipation up to Tmb =25 °C 44 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV193 intended for common emitter class-A and class-AB operation in the 900 MHz communications band.

The BLV193 has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.


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