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Part Number: BLV194

 

MFG: PHL

 

 

Description: NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz ...


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BLV194 General Description


NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band.

The transistor has a SOT171 flange envelope with a ceramic cap.

All leads are isolated from the mounting base.

BLV194 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCEO collector-emitter voltage open base - 16 V
VCES collector-emitter voltage base short-circuited - 32 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC)   - 3 A
IC(AV) average collector current   - 3 A
Ptot total power dissipation Tmb =25 °C - 46 W
Tstg storage temperature   -65 150
Tj junction temperature   - 200

BLV194 Features

• Emitter-ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

BLV194 Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from  uch improper use or sale.

BLV194 datasheet

BLV194
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BLV194 Relative Products

  • BLV193

    BLV193

    NPN silicon planar epitaxial transistor BLV193 intended for common emitter class-A and class-AB operation in the 900 MHz communications band.The BLV193 has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.

  • BLV12

    BLV12

    NPN silicon planar epitaxial transistor BLV12 encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.BLV12 is designed for common emitter,class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from th...

  • BLV11

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  • BLV103

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    NPN silicon planar epitaxial transistor BLV103 encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. BLV103 is intended for common emitter,class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated ...

  • BLV100

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  • BLV10

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