Features: • Emitter-ballasting resistors for an optimum temperature profile• Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected...
BLV194: Features: • Emitter-ballasting resistors for an optimum temperature profile• Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life s...
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These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from uch improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCEO | collector-emitter voltage | open base | - | 16 | V |
VCES | collector-emitter voltage | base short-circuited | - | 32 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current (DC) | - | 3 | A | |
IC(AV) | average collector current | - | 3 | A | |
Ptot | total power dissipation | Tmb =25 °C | - | 46 | W |
Tstg | storage temperature | -65 | 150 | ||
Tj | junction temperature | - | 200 |
NPN silicon planar epitaxial transistor BLV194 intended for common emitter class-AB operation in the 900 MHz communications band.
The BLV194 has a SOT171 flange envelope with a ceramic cap.
All leads are isolated from the mounting base.