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BLV2046

Features: * Emitter ballasting resistors for optimum temperature profile* Gold metallization ensures excellent reliability* Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits.Application* Common emitter class-AB operation ...

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SeekIC No. : 004300683 Detail

BLV2046: Features: * Emitter ballasting resistors for optimum temperature profile* Gold metallization ensures excellent reliability* Internal input and output matching to achieve high power gain and collecto...

BLV2046 Data Sheet

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Part Number:
BLV2046
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits.


Application

* Common emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current 12 A
IC(AV) collector current 12 A
Ptot total power dissipation Tmb =25 °C 195 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar transistor BLV2046 in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange.


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