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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: BLV2046

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the fl...


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BLV2046 General Description


NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange.

BLV2046 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current 12 A
IC(AV) collector current 12 A
Ptot total power dissipation Tmb =25 °C 195 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV2046 Features

* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits.

BLV2046 Typical Application

* Common emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range.

BLV2046 Connection Diagram

BLV2046  Connection Diagram

BLV2046 datasheet

BLV2046
PDF/DataSheet Download

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BLV2046 Relative Products

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    NPN silicon planar transistor BLV2044 in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange.

  • BLV2042

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    NPN silicon planar epitaxial power transistor BLV2042 in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base.

  • BLV20

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  • BLV194

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  • BLV193

    BLV193

    NPN silicon planar epitaxial transistor BLV193 intended for common emitter class-A and class-AB operation in the 900 MHz communications band.The BLV193 has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.

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