BLV57

Configuration :
Packaging : Tray
Continuous Collector Current : 2 A
Maximum Operating Frequency : 860 MHz
Collector- Emitter Voltage VCEO Max : 27 V
Emitter- Base Voltage VEBO : 3.5 V
Maximum DC Collector Current : 4 A
Power Dissipation : 77 W
Package / Case : SOT-161A


Features:

* internally matched input for wideband operation and high power gain
* internal midpoint (r.f. ground) reduces negative feedback and improves power gain
* increased input and output impedances (compared with single-ended transistors) simplify wideband matching
* length of the external emitter leads is not critical
* diffused emitter ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter		50	V
VCES	collector-emitter voltage	open base		27	V
VEBO	emitter-base voltage	open collector		3.5	V
IC,IC(AV)	collector current	DC or average value		2	A
ICM	peak collector current	peak value f > 1 MHz		4	A
Ptot	total power dissipation	f > 1 MHz;Ts = 103 °C (note 1)		77	W
Tstg	storage temperature		-65	+150
Tj	operating junction temperature			175

Description

Two n-p-n silicon planar epitaxial transistor BLV57 sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. elevision transmitters and transposers.

The package of BLV57 is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange.