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Part Number: BLV59

 

MFG: PHL

 

 

Description: NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All l...


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BLV59 General Description


NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange.

BLV59 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC collector current(DC) 3 A
IC,IC(AV) average collector current 3 A
ICM peak collector current  f > 1 MHz 9 A
Ptot total power dissipation Tmb =25 °C; f > 1 MHz 70 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV59 Features

* Internal input matching to achieve an optimum wideband capability and high power gain
* Emitter-ballasting resistors for lower junction temperatures
* Titanium-platinum-gold metallization ensures long life and excellent reliability.

BLV59 Typical Application

* UHF linear amplifiers in television transmitters.

BLV59 Connection Diagram

BLV59  Connection Diagram

BLV59 datasheet

BLV59
PDF/DataSheet Download

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BLV59 Relative Products

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  • BLV57

    BLV57

    Two n-p-n silicon planar epitaxial transistor BLV57 sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. elevision transmitters and transposers.The package of BLV57 is an 8-lead flange type with a ceramic cap...

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  • BLV32F

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  • BLV31

    BLV31

    The ASI BLV31 is Designed for use in VHF amplifiers

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