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BLV58

Features: * High power gain* Double stage internal input matching for high input impedance* Diffused emitter-ballasting resistors enhances ruggedness* Gold metallization for high reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage ...

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SeekIC No. : 004300687 Detail

BLV58: Features: * High power gain* Double stage internal input matching for high input impedance* Diffused emitter-ballasting resistors enhances ruggedness* Gold metallization for high reliability.PinoutS...

BLV58 Data Sheet

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Part Number:
BLV58
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High power gain
* Double stage internal input matching for high input impedance
* Diffused emitter-ballasting resistors enhances ruggedness
* Gold metallization for high reliability.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC,IC(AV) collector current DC or average value 4 A
ICM peak collector current peak value f > 1 MHz 8 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 87 W
Tstg storage temperature -65 +150
Tj operating junction temperature 175



Description

The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers.

The BLV58 is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange.


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