Position: Home > Datasheet list > BLV Series > Index B > BLV99/SL
Electronica China

Purchase BLV99/SL, In-stock BLV99/SL From SeekIC.

MFG:MOT  

BLV99/SL Product Image

BLV Series Datasheet download

Five Points

Part Number: BLV99/SL

 

MFG: MOT

 

 

Description: NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed pr...


Urgent Purchase

BLV99/SL General Description


NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base.

BLV99/SL Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC collector current DC or average value 200 A
ICM collector current peak value f > 1 MHz 600 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 6 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLV99/SL Features

* Emitter-ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.

BLV99/SL Connection Diagram

BLV99/SL Connection Diagram

BLV99/SL datasheet

BLV10
PDF/DataSheet Download

Find BLV99/SL Suppliers

  • ·BLV100
  • PHILIPS [Philips Semiconductors] 
  • UHF power transistor 
  • 65053 KB
  • BLV100 Datasheet Download
  • ·BLV103
  • PHILIPS [Philips Semiconductors] 
  • UHF power transistor 
  • 92135 KB
  • BLV103 Datasheet Download
  • ·BLV11
  • PHILIPS [Philips Semiconductors] 
  • VHF power transistor 
  • 83857 KB
  • BLV11 Datasheet Download
  • ·BLV12
  • PHILIPS [Philips Semiconductors] 
  • VHF power transistor 
  • 73800 KB
  • BLV12 Datasheet Download
  • ·BLV193
  • PHILIPS [Philips Semiconductors] 
  • UHF power transistor 
  • 111243 KB
  • BLV193 Datasheet Download
  • ·BLV194
  • PHILIPS [Philips Semiconductors] 
  • UHF power transistor 
  • 93506 KB
  • BLV194 Datasheet Download
  • ·BLV20
  • PHILIPS [Philips Semiconductors] 
  • VHF power transistor 
  • 83772 KB
  • BLV20 Datasheet Download
  • ·BLV2042
  • PHILIPS [Philips Semiconductors] 
  • UHF power transistor 
  • 112042 KB
  • BLV2042 Datasheet Download

Related Part Number

BLV99/SL Relative Products

  • BLV98CE

    BLV98CE

    NPN silicon planar epitaxial transistor BLV98CE in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are ...

  • BLV97CE

    BLV97CE

    NPN silicon planar epitaxial transistor BLV97CE in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor BLV97CE has a 6-lead flange envelope, with a ceramic cap. All lead...

  • BLV958FL

    BLV958FL

    NPN silicon planar epitaxial transistors BLV958FL primarily intended for common emitter class-AB operation. The transistors have internalinput and output matching by means of MOS capacitors. The encapsulations of BLV958FL are a 2-lead rectangular SOT391A fla...

  • BLV958

    BLV958

    NPN silicon planar epitaxial transistors BLV958 primarily intended for common emitter class-AB operation. The transistors BLV958 have internalinput and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange pac...

  • BLV950

    BLV950

    Two NPN silicon planar epitaxial transistors BLV950 in push-pull configuration, intended for linear common emitter class-AB operation. The transistors BLV950 are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the co...

  • BLV946

    BLV946

    NPN silicon planar transistor BLV946 intended for common emitte class-AB operation. The transistor has internal input and output matching by means of MOS capacitors. The encapsulation is a SOT273A flange envelope with a ceramic cap. All leads are isolated fr...

Hotspot Suppliers Product

Product List

  • Models: IXFH26N50Q Price: 0.7-1.5 USD

    IXFH26N50Q

    Price: 0.7-1.5 USD

    Power MOSFET, 500 V, TO-247

  • Models: BPW77NB Price: 1.5-1.6 USD

    BPW77NB

    Price: 1.5-1.6 USD

    silicon NPN phototransistor, TO-18, 80 V, 100 mA, High photo sensitivity, Fast response times

  • Models: ADV7180BCPZ Price: 2-6 USD

    ADV7180BCPZ

    Price: 2-6 USD

    one-chip, multiformat video decoder, ITU-R BT.656 format

  • Models: 74LVC573APW Price: 0.1-1 USD

    74LVC573APW

    Price: 0.1-1 USD

    Octal D-type transparent latch, 3-State, SOIC

  • Models: SKKT57/16E Price: 13-15 USD

    SKKT57/16E

    Price: 13-15 USD

    Thyristor / Diode Module, 60 A, 1.65 V, 3.5 mΩ, hard soldered joints

  • Models: DS1245Y-70IND Price: 3-15 USD

    DS1245Y-70IND

    Price: 3-15 USD

    nonvolatile SRAM, 32DIP, -0.3V to +7.0V, Low-power CMOS, Unlimited write cycles

  • Models: AT24C64 Price: 0.0001-5 USD

    AT24C64

    Price: 0.0001-5 USD

    DIP, Low Power, High Reliability, 2-wire serial EEPROM, 6.25V, 5.0 mA

  • Models: LM2576T-ADJ Price: 1.29-1.42 USD

    LM2576T-ADJ

    Price: 1.29-1.42 USD

    Adjustable regulator, 3A, TO220-5, Step-Down (Buck), 1.23 V to 37 V

  • Models: SPW17N80C3 Price: 0.85-2 USD

    SPW17N80C3

    Price: 0.85-2 USD

    Power Transistor, TO247, 17 A

  • Models: LSSK62 Price: 1.64-2.19 USD

    LSSK62

    Price: 1.64-2.19 USD

    LSSK62, SOP, Integrated Circuits

  • Models: B3F-3125 Price: 0.364-0.468 USD

    B3F-3125

    Price: 0.364-0.468 USD

    Flat, 3.85 mm, Operating force (OF) 2.55 N (260 gf)

  • Models: LF353N Price: 0.1-1 USD

    LF353N

    Price: 0.1-1 USD

    operational amplifier, DIP, ±18V, low cost, high speed, Low input bias current

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All