BLW90

Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	60
Collector-emitter voltage (open base)	Vceo	max.	30v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC,IC(AV)	max.	0.62 A
(peak value); f > 1 MHz	ICM	max.	2.0 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot (r.f.)	max.	18.6 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW90 suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The BLW90 is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization.

The BLW90 is housed in a 1/4" capstan envelope with a ceramic cap. All leads are isolated from the stud.