BLW96

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tray


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCBSM	max.	110v
Collector-emitter voltage (open base)	Vceo	max.	55v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	12 A
(peak value); f > 1 MHz	ICM	max.	40 A
R.F. power dissipation
(f > 1 MHz); Tmb =45 °C	P(r.f.)	max.	340 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW96 intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. BLW96 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.

The BLW96 has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.