BLW97

Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCBSM	max.	65v
Collector-emitter voltage (open base)	Vceo	max.	33v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	15 A
(peak value); f > 1 MHz   Total d.c. power dissipation at Th =25°C	ICM Ptot(d.c.)	max. max.	20 A 190W
R.F. power dissipation
f > 1 MHz; Tmb = 25 °C	Ptot (r.f.)	max.	230 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW97 designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band.

The BLW97 offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand  severe load-mismatch conditions. All leads are isolated from the flange.

The BLW97 are supplied in matched hFE groups.